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| FGA90N30D 300V PDP IGBT September 2006 FGA90N30D 300V PDP IGBT Features * High Current Capability * Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A * High Input Impedance Description Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential. C G TO-3P GCE E TC = 25C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Notes: Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current (Note 1) FGA90N30D 300 30 @ TC = 25C @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C 90 220 10 40 219 87 -55 to +150 -55 to +150 300 Units V V A A A A W W C C C Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds (1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 0.57 1.56 40 Units C/W C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA90N30D Rev. A FGA90N30D 300V PDP IGBT Package Marking and Ordering Information Device Marking FGA90N30D Device FGA90N30D Package TO-3P Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250A VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 300 ---- -0.6 --- --100 250 V V/C A nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 90A, VGE = 15V IC = 90A, VGE = 15V, TC = 125C 2.5 ---4.0 1.1 1.9 2.0 5.0 1.4 --V V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1700 290 80 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200V, IC = 20A, VGE = 15V VCC = 200V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 125C VCC = 200V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 25C -----------------30 200 110 140 0.15 0.45 0.6 30 210 110 200 0.16 0.72 0.88 87 12 38 ---300 ----------130 18 57 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC 2 FGA90N30D Rev. A www.fairchildsemi.com FGA90N30D 300V PDP IGBT Electrical Characteristics of DIODE TC = 25C unless otherwise noted Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage IF = 10A Test Conditions TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C Min. --------- Typ. 1.1 0.9 21 35 2.8 5.6 29.4 98 Max. 1.4 -------- Units V Diode Reverse Recovery Time IF = 10A dI/dt = 200A/s ns Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge A nC 3 FGA90N30D Rev. A www.fairchildsemi.com FGA90N30D 300V PDP IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 100 20V 15V 80 12V TC = 25 C 80 o Figure 2. Typical Output Characteristics 100 20V 15V 12V 10V TC = 125 C o Collector Current, IC [A] 10V Collector Current, I [A] C 60 V GE= 8 V 40 60 V GE= 8 V 40 20 20 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 C o lle c to r -E m itte r V o lta g e , V C E [V ] C o lle c t o r - E m it te r V o lt a g e , V C E [ V ] Figure3. Typical Saturation Voltage Characteristics C o m m o n E m itte r V Ge = 15V Figure 4. Transfer characteristics 80 Collector Current, I [A] Collector Current, IC [A] Tc = 25 C o Tc = 125 C 60 o 100 C o m m o n E m itte r V CE = 2 0V TC = 25 C o o 40 C TC = 125 C 10 20 0 0 1 2 3 1 0 2 4 6 8 10 C o lle c to r - E m itte r V o lta g e , V C E [V ] G a te - E m itte r V o lta g e , V G E [V ] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 6 C o m m o n E m it t e r V GE = 15V 90A 1 .8 1 .6 1 .4 1 .2 1 .0 0 .8 0 .6 0 .4 25 50 75 100 o Figure 6. Saturation Voltage vs. VGE 2 .4 [V] 2 .2 2 .0 [V] C o m m o n E m itt e r o TC = 25 C 5 CE Collector - Emitter Voltage, V Collector-Emitter Voltage, V CE 4 40A 20A 3 2 20A 1 10A 90A 40A Ic= 1 0 A 125 0 4 8 12 16 20 C a s e T e m p e ra tu re , T C ( C ) G a te - E m itte r V o lta g e , V G E [V ] 4 FGA90N30D Rev. A www.fairchildsemi.com FGA90N30D 300V PDP IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 6 C o m m o n E m it t e r o TC = 125 C CE (Continued) Figure 8. Capacitance Charaacteristics [V] 5 C ie s 4 Collector - Emitter Voltage, V Capacitance [pF] 1000 Coes 3 C re s 2 20A 1 10A 0 4 8 12 40A 90A 100 C o m m o n E m itte r V GE = 0V , f = 1M H z TC = 25 C o 16 20 0 .1 1 10 G a te - E m itte r V o lta g e , V G E [V ] C o lle c to r - E m itte r V o lta g e , V C E [V ] Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics 15 C o m m o n E m it t e r RL = 10 ohm TC = 25 C o Ic M A X (P u ls e d ) 100 Ic M A X (C o n tin u o u s ) 100s 1m s 10 D C O p e ra tio n 50s [V] Gate-Emitter Voltage, V 10 Vcc = 200V Collector Current, Ic [A] GE 1 5 0 .1 0 0 10 20 30 40 50 60 70 80 90 0 .0 1 0 .1 S in g le N o n re p e titive o P u lse T c = 2 5 C C u rve s m u s t b e d e ra te d lin e a rly w ith in c re a s e in te m p e ra tu re 1 10 100 1000 G a te C h a rg e , Q g [n C ] C o lle c to r - E m itte r V o lta g e , V C E [V ] Figure 11. Turn-On Characteristics vs. Gate Resistance 1000 C o m m o n E m itte r V CC = 20 0 V , V GE = 15V IC = 2 0 A o T C = 25 C T C = 125 C o Figure 12. Turn-Off Characteristics vs. Gate Resistance 1000 Switching Time [ns] Switching Time [ns] tr tf 100 100 td (o ff) td (o n ) C o m m o n E m itte r V CC = 20 0 V , V GE = 15 V IC = 2 0 A TC = 25 C o 10 0 20 40 60 80 100 10 0 20 40 60 TC = 125 C o 80 100 G a te R e s is ta n c e , R G [ ] G a t e R e s is t a n c e , R G [ ] 5 FGA90N30D Rev. A www.fairchildsemi.com FGA90N30D 300V PDP IGBT Typical Performance Characteristics Figure 13. Turn-On Characteristics vs. Collector Current 1000 C o m m o n E m it t e r V GE = 15V , R G = 10 TC = 25 C o (Continued) Figure 14.Turn-Off Characteristics vs. Collector Current 1000 Switching Time [ns] tr 100 Switching Time [ns] TC = 125 C o tf 100 td ( o f f ) td (o n ) C o m m o n E m it te r V GE = 15 V , R G = 10 TC = 25 C o 10 0 20 40 60 80 100 10 0 TC = 125 C 20 40 60 80 100 o C o lle c to r C u r r e n t , Ic [ A ] C o lle c to r C u r r e n t , Ic [A ] Figure 15. Switching Loss vs. Gate Resistance Figure 16.Switching Loss vs. Collector Current 10 1 E o ff Switching Loss [mJ] Switching Loss [mJ] 1 0 .1 Eon E o ff 0 .1 C o m m o n E m it t e r V GE = 15 V , R G = 1 0 TC = 25 C 0 .0 1 TC = 125 C 0 20 40 60 80 100 o o C o m m o n E m itte r V CC = 200V , V GE = 15V IC = 2 0 A TC = 25 C TC = 125 C 0 .0 1 0 20 40 60 80 100 o o Eon G a te R e s is t a n c e , R G [ ] C o lle c t o r C u r r e n t , I c [ A ] Figure 17. Turn-Off SOA Figure 1000 Safe O perating Area o V G E = 20V , T C = 100 C Collector Current, IC [A] 100 10 1 10 100 1000 C ollector-E m itter V oltage, V C E [V ] 6 FGA90N30D Rev. A www.fairchildsemi.com FGA90N30D 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 18. Transient Thermal Impedance of IGBT 1 0.5 Thermal Response [Zthjc] 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Figure 19. Forward Characteristics Figure 20. Typical Reverse Recovery Current 5 I F = 10A Reverse Recovery Current , Irr [A] 100 T J = 125 C o Forward Current , IF [A] 4 T C = 25 C o 10 T J = 25 C o 3 2 1 1 T C = 25 C 0.1 0.0 0.5 1.0 1.5 T C = 125 C 2.0 2.5 o o 0 100 di/dt [A/s] 500 Forw ard Voltage , V F [V] Figure 21. Typical Reverse Recovery Time 36 IF = 10A Reverse Recovery Time , trr [ns] Tc = 25 C 32 o 28 24 100 di/dt [A/s] 500 7 FGA90N30D Rev. A www.fairchildsemi.com FGA90N30D 300V PDP IGBT Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 8 FGA90N30D Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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